Dark current in quantum dot infrared photodetectors

Citation
V. Ryzhii et al., Dark current in quantum dot infrared photodetectors, JPN J A P 2, 39(12B), 2000, pp. L1283-L1285
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
12B
Year of publication
2000
Pages
L1283 - L1285
Database
ISI
SICI code
Abstract
We present the results of a new analytical model for the analysis of the da rk current in realistic quantum dot infrared photodetectors (QDIPs), This m odel includes the effect of the space charge formed by electrons captured i n QDs and donors, the self-consistent electric potential in the QDIP active region, the activation character of the electron capture and its limitatio n by the Pauli principle, the thermionic electron emission from QDs and the rmionic injection of electrons From the emitter contact into the QDIP activ e region, and the existence of the punctures between QDs. The developed mod el yields the dark current as a function of the QDIP structural parameters, applied voltage, and temperature. It explains some features of the dark cu rrent characteristics observed experimentally.