The formation of pore arrays with high aspect ratios by electrochemica
l etching of n-type silicon in hydrofluoric acid is a well established
technique. The macropore morphology depends sensitively on the anodiz
ation conditions such as current density, etching time, HF concentrati
on, temperature and bias as well as on substrate properties such as do
ping density and orientation. The limits of feasible pore geometries a
nd pore patterns and their dependence on formation conditions will be
discussed in this work. (C) 1997 Elsevier Science S.A.