INVESTIGATION ON THE ELECTROCHEMICAL DEPOSITION OF CADMIUM TELLURIDE IN POROUS SILICON

Most physical deposition methods are unable to cover the inner surface of porous silicon (PS), whereas electroplating has been successfully used. So it seems very attractive to use the electrochemical depositio n of a semiconductor such as CdTe to create a nanocomposite structure and to provide charge injection into the structure. We show that CdTe can be deposited on silicon and porous silicon from an electrolyte con taining CdSO4 and TeO2 in acidic conditions. Physical analysis by X-ra y diffraction, X-ray photoelectron spectroscopy and Auger electron spe ctroscopy confirm that the deposits are microcrystalline CdTe showing a preferential orientation along the (111) direction. Afterdeposition, the photoluminescence intensity of porous silicon is found to be stro ngly affected, particularly upon drying. (C) 1997 Elsevier Science S.A .