CHARACTERIZATION OF FREEZE-DRIED POROUS SILICON

The first characterisation results on freeze-dried porous silicon are reported. The freeze drying process is shown to be highly non-destruct ive. The samples so far obtained on substrates with different doping d ensity show better morphological, optical and photoluminescence proper ties. The first structural information on freeze-dried PS have been ob tained by Raman and transmission electron microscopy techniques. Compa red with other drying techniques, freeze drying appears to be a simple and contamination-free method. (C) 1997 Elsevier Science S.A.