COMPUTER-SIMULATION OF PERCOLATED POROUS SI STRUCTURE AND ITS APPLICATION TO ELECTRICAL-CONDUCTIVITY SIMULATION

Citation
Ecc. Yeh et al., COMPUTER-SIMULATION OF PERCOLATED POROUS SI STRUCTURE AND ITS APPLICATION TO ELECTRICAL-CONDUCTIVITY SIMULATION, Thin solid films, 297(1-2), 1997, pp. 88-91
Citations number
19
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
297
Issue
1-2
Year of publication
1997
Pages
88 - 91
Database
ISI
SICI code
0040-6090(1997)297:1-2<88:COPPSS>2.0.ZU;2-Q
Abstract
The structure of porous silicon (PS) was simulated by a two-dimensiona l site-percolated network model. In this model, both porosity and geom etrical morphology were independently controlled. The conductivity of the generated PS structures were numerically simulated, and the effect s of porosity and geometrical connection of PS on the conduction behav ior of percolated Si network were isolated and identified. It was show n that the geometrical connection of PS causes its conduction behavior to become distinctly different from that in a random network. (C) 199 7 Elsevier Science S.A.