Ecc. Yeh et al., COMPUTER-SIMULATION OF PERCOLATED POROUS SI STRUCTURE AND ITS APPLICATION TO ELECTRICAL-CONDUCTIVITY SIMULATION, Thin solid films, 297(1-2), 1997, pp. 88-91
The structure of porous silicon (PS) was simulated by a two-dimensiona
l site-percolated network model. In this model, both porosity and geom
etrical morphology were independently controlled. The conductivity of
the generated PS structures were numerically simulated, and the effect
s of porosity and geometrical connection of PS on the conduction behav
ior of percolated Si network were isolated and identified. It was show
n that the geometrical connection of PS causes its conduction behavior
to become distinctly different from that in a random network. (C) 199
7 Elsevier Science S.A.