QUANTITATIVE-ANALYSIS OF THE LIGHT-SCATTERING EFFECT ON POROUS SILICON OPTICAL MEASUREMENTS

Citation
G. Lerondel et R. Romestain, QUANTITATIVE-ANALYSIS OF THE LIGHT-SCATTERING EFFECT ON POROUS SILICON OPTICAL MEASUREMENTS, Thin solid films, 297(1-2), 1997, pp. 114-117
Citations number
16
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
297
Issue
1-2
Year of publication
1997
Pages
114 - 117
Database
ISI
SICI code
0040-6090(1997)297:1-2<114:QOTLEO>2.0.ZU;2-7
Abstract
The effect of light scattering on standard optical measurements of thi n films is presented. According to the Davies-Bennett theory, the scat tering is introduced quantitatively in the calculation of the energy t ransmission and reflection coefficients. The relations of continuity a re adapted to perform reflectivity simulation in the case of rough int erfaces. A comparison with reflectivity spectra of PSi layer is made a nd shows that when the scattering is neglected, the absorption coeffic ient of the material is overestimated. Using the roughness amplitude d ependence vs. the current density of formation, we perform a simulatio n of a double layer structure. It then becomes possible to characteriz e by optical analysis the quality of the interfaces in multilayers, wh ich presently is under considerable investigations. (C) 1997 Elsevier Science S.A.