R. Guerrerolemus et Jm. Martinezduart, TIME EVOLUTION OF SURFACE POROUS SILICON COMPOSITION UNDER DIFFERENT POSTETCH TREATMENTS, Thin solid films, 297(1-2), 1997, pp. 118-121
Diffuse reflectance Fourier transform infrared spectroscopy and photol
uminescence measurements have been performed on porous silicon layers
(PSLs) after different post-etch treatments: immediate drying under fl
owing N-2, rinsing in deionized water, and ethanol immersion. Layer co
mposition and luminescence were also subsequently monitored during len
gthy storage in ambient conditions. This study reveals a different sur
face composition and morphology arising from each post-anodization pro
cedure, and no clear relation between composition and photoluminescenc
e evolution of PSLs. (C) 1997 Elsevier Science S.A.