TIME EVOLUTION OF SURFACE POROUS SILICON COMPOSITION UNDER DIFFERENT POSTETCH TREATMENTS

Authors
GUERREROLEMUS R MARTINEZDUART JM
Citation
R. Guerrerolemus et Jm. Martinezduart, TIME EVOLUTION OF SURFACE POROUS SILICON COMPOSITION UNDER DIFFERENT POSTETCH TREATMENTS, Thin solid films, 297(1-2), 1997, pp. 118-121
Citations number
19
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
297
Issue
1-2
Year of publication
1997
Pages
118 - 121
Database
ISI
SICI code
0040-6090(1997)297:1-2<118:TEOSPS>2.0.ZU;2-S
Abstract
Diffuse reflectance Fourier transform infrared spectroscopy and photol uminescence measurements have been performed on porous silicon layers (PSLs) after different post-etch treatments: immediate drying under fl owing N-2, rinsing in deionized water, and ethanol immersion. Layer co mposition and luminescence were also subsequently monitored during len gthy storage in ambient conditions. This study reveals a different sur face composition and morphology arising from each post-anodization pro cedure, and no clear relation between composition and photoluminescenc e evolution of PSLs. (C) 1997 Elsevier Science S.A.