FEMTOSECOND DEPHASING IN POROUS SILICON

Authors
MONIATTE J HONERLAGE B LEVY R TOMASIUNAS R PELANT I
Citation
J. Moniatte et al., FEMTOSECOND DEPHASING IN POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 135-137
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
297
Issue
1-2
Year of publication
1997
Pages
135 - 137
Database
ISI
SICI code
0040-6090(1997)297:1-2<135:FDIPS>2.0.ZU;2-#
Abstract
We have performed non-degenerate four-wave mixing on free-standing por ous Si samples, Within the framework of an idealized inhomogeneously b roadened two-level system, values of 20 fs for the dephasing time are obtained for different porosities. Fast energy relaxation times are fo und in the range 1.5-3.5 ps for 64-73% porosities, respectively. They are attributed to carrier thermalization within the band tails, origin ating from porous silicon nanocrystallites and their surface states. ( C) 1997 Elsevier Science S.A.