F. Bassani et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF LOW-DIMENSIONAL SILICON STRUCTURESEMBEDDED IN CAF2, Thin solid films, 297(1-2), 1997, pp. 179-182
We report on the elaboration by molecular beam epitaxy of low dimensio
nal silicon structures embedded in calcium fluoride, We have succeeded
in fabricating nanocrystalline Si/CaF2 multilayers which exhibit effi
cient visible luminescence at room temperature. The disappearance of t
he luminescence when the Si layers become too thick, and the blue-shif
t of the spectra when the Si layer thickness decreases, are consistent
with a model based on quantum size effects. The important role of oxy
gen as passivating agent after ageing in air, is also pointed out. We
also present preliminary results on the growth of Si on CaF2 V-grooved
films deposited on Si(110) substrates. Si nucleates along the [(1) ov
er bar 10] direction and leads to islanding owing to the difference in
surface free energy. (C) 1997 Elsevier Science S.A.