Porous alumina covered with spin-on erbium-doped silica sol-gel film,
subjected to thermal processing above 973 K, exhibited strong Er-relat
ed photoluminescence at 1.53 mu m at room temperature. The intensity o
f the photoluminescence increases with the thickness of both the porou
s alumina and the spin-on film, the latter being built up layer-by-lay
er to avoid cracking. SIMS analysis shows that the Er penetrates throu
ghout the porous alumina. The sol-gel method is a flexible technique,
compatible with planar silicon-based technology, for fabricating lanth
anide-containing luminescent structures in porous materials on silicon
. (C) 1997 Elsevier Science S.A.