TECHNOLOGY AND RBS ANALYSIS OF POROUS SILICON LIGHT-EMITTING-DIODES

Authors
LANG W KOZLOWSKI F STEINER P KNOLL B WIEDENHOFER A KOLLEWE D BACHMANN T
Citation
W. Lang et al., TECHNOLOGY AND RBS ANALYSIS OF POROUS SILICON LIGHT-EMITTING-DIODES, Thin solid films, 297(1-2), 1997, pp. 268-271
Citations number
24
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
297
Issue
1-2
Year of publication
1997
Pages
268 - 271
Database
ISI
SICI code
0040-6090(1997)297:1-2<268:TARAOP>2.0.ZU;2-B
Abstract
The technology and analysis of porous silicon electroluminescent devic es and recent developments are described. An increase of efficiency in the blue range is achieved by the introduction of metals into the por es. The technologies to do this are electroplating and coevaporation. Devices with a polysilicon top layer show promising results; a quantum efficiency of 4 x 10(-2)% is measured. In order to investigate oxidat ion, degradation and local porosity, RBS (Rutherford Backscattering Sp ectroscopy) is used. (C) 1997 Elsevier Science S.A.