We report on the application of porous silicon (PS) as an antireflecti
on coating material for commercial multicrystalline silicon solar cell
s. A PS layer was formed on the thin emitter of n(+)/p junctions (0.3
mu m thick) produced for optimal photovoltaic characteristics with the
front contact grid already deposited. This technique allows us to res
trict PS formation to the areas between the grid fingers without chang
ing the front contact (selective PS formation). Reflectivity measureme
nts, quantum efficiencies and I-V characteristics are presented and ca
refully compared with the performances of cells using a classical anti
reflection coating (SiO2 + TiO2) in order to evaluate the effectivenes
s of PS. The photovoltaic characteristics of the PS n(+)/p junctions a
re comparable to those of the best multicrystalline solar cells produc
ed commercially by the same manufacturer of the n(+)/p junction. (C) 1
997 Elsevier Science S.A.