THE POROUS SILICON EMITTER CONCEPT APPLIED TO MULTICRYSTALLINE SILICON SOLAR-CELLS

Citation
S. Strehlke et al., THE POROUS SILICON EMITTER CONCEPT APPLIED TO MULTICRYSTALLINE SILICON SOLAR-CELLS, Thin solid films, 297(1-2), 1997, pp. 291-295
Citations number
8
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
297
Issue
1-2
Year of publication
1997
Pages
291 - 295
Database
ISI
SICI code
0040-6090(1997)297:1-2<291:TPSECA>2.0.ZU;2-8
Abstract
We report on the application of porous silicon (PS) as an antireflecti on coating material for commercial multicrystalline silicon solar cell s. A PS layer was formed on the thin emitter of n(+)/p junctions (0.3 mu m thick) produced for optimal photovoltaic characteristics with the front contact grid already deposited. This technique allows us to res trict PS formation to the areas between the grid fingers without chang ing the front contact (selective PS formation). Reflectivity measureme nts, quantum efficiencies and I-V characteristics are presented and ca refully compared with the performances of cells using a classical anti reflection coating (SiO2 + TiO2) in order to evaluate the effectivenes s of PS. The photovoltaic characteristics of the PS n(+)/p junctions a re comparable to those of the best multicrystalline solar cells produc ed commercially by the same manufacturer of the n(+)/p junction. (C) 1 997 Elsevier Science S.A.