OPERATION OF ELECTROLUMINESCENT POROUS SILICON DIODES AS SURFACE-EMITTING COLD CATHODES

Citation
X. Sheng et al., OPERATION OF ELECTROLUMINESCENT POROUS SILICON DIODES AS SURFACE-EMITTING COLD CATHODES, Thin solid films, 297(1-2), 1997, pp. 314-316
Citations number
4
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
297
Issue
1-2
Year of publication
1997
Pages
314 - 316
Database
ISI
SICI code
0040-6090(1997)297:1-2<314:OOEPSD>2.0.ZU;2-T
Abstract
Cold electron emission properties of porous silicon (PS) electrolumine scent diodes have been investigated as a function of the top metal ele ctrode thickness, surface work function, and the thickness of PS layer . It is shown that the best thicknesses for Pt and Au electrodes are 5 0 - 80 Angstrom. The emission is enhanced by introducing an Al-Mg allo y electrode with a relatively low work function. Although the emission efficiency and the threshold voltage show definite dependencies on th e thickness of PS layer, the Fowler-Nordheim plots show a linear behav ior in every case. The maximum emission current density and efficiency obtained in this study are 10 mu A cm(-2) and 10(-3), respectively.