Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD

The effect of the growth pressure on the In incorporation in InGaN thin fil ms, grown by metalorganic chemical vapor deposition (MOCVD) have been inves tigated. The InGaN thin films were grown by varying the growth pressures, w hile maintaining all other growth parameters constant. Photoluminescence an d high resolution x-ray diffraction (XRD) measurements showed that the In i ncorporation in the InGaN thin film was drastically increased with decreasi ng growth pressures. XRD analysis also revealed that the In concentration i n the films was increased by 7.5% as the growth pressure was decreased from 250 torr to 150 torr. This can be attributed to the enhanced mass transpor tation of precursor gases through the boundary-layer on the substrate in th e MOCVD system.