Electrical properties of Ni/Au ohmic contacts on p-type GaN were interprete
d with the change of microstructure observed under transmission electron mi
croscopy. The contact resistivity was decreased from 1.3 x 10(-2) to 6.1 x
10(-4) Omega cm(2) after annealing at 600 degreesC. The reduction is due to
the dissolution of Ga atoms into Au-Ni solid solution formed during anneal
ing, via the generation of Ga vacancies, Thus, net concentration of holes i
ncreased below the contact, resulting in the reduction of contact resistivi
ty. At 800 degreesC, N atoms decomposed; reacted with Ni, and forming cubic
Ni4N. Consequently, N vacancies, acting as donors in GaN, were generated b
elow the contact, leading to the increase of contact resistivity to 3.8 x 1
0(-2) Omega cm(2).