DIPPING-INDUCED INPLANE MOLECULAR ALIGNMENT OF LB FILMS

Citation
Xz. Lu et al., DIPPING-INDUCED INPLANE MOLECULAR ALIGNMENT OF LB FILMS, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 294, 1997, pp. 23-26
Citations number
7
Categorie Soggetti
Crystallography
ISSN journal
1058725X
Volume
294
Year of publication
1997
Pages
23 - 26
Database
ISI
SICI code
1058-725X(1997)294:<23:DIMAOL>2.0.ZU;2-Z
Abstract
Super-quadratic growth of SHG intensity with thickness could be realiz ed due to the extra dipping-induced and epitaxy-enhanced in-plane pola rization in the hemicyanine LB multilayers.