NANOSTRUCTURAL FORMATION OF SELF-ASSEMBLED MONOLAYER FILMS ON CLEAVEDALGAAS GAAS HETEROJUNCTIONS/

Authors
OHNO H NAGAHARA LA GWO S MIZUTANI W TOKUMOTO H
Citation
H. Ohno et al., NANOSTRUCTURAL FORMATION OF SELF-ASSEMBLED MONOLAYER FILMS ON CLEAVEDALGAAS GAAS HETEROJUNCTIONS/, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 294, 1997, pp. 487-490
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals → ACNP
ISSN journal
1058725X
Volume
294
Year of publication
1997
Pages
487 - 490
Database
ISI
SICI code
1058-725X(1997)294:<487:NFOSMF>2.0.ZU;2-6
Abstract
We have demonstrated that nanostructures of self-assembled monolayer ( NSAM) films of alkanethiols can be formed on the GaAs surface of a AlG aAs/GaAs heterojunctions by cleaving the substrates in an octadecylthi ol solution diluted with ethanol. NSAMs with line width as narrow as 5 nm were observed by phase imaging using tapping mode cross-sectional atomic force microscopy (TMXAFM). Time dependent observation of the su rface in ail revealed that the nanostructual formation occurred as a r esults of both selective chemisorption of alkanethiol on GaAs surfaces and the oxidation of AlGaAs surface.