WO3 thin film sensor prepared by sol-gel technique and its low-temperaturesensing properties to trimethylamine

Citation
Ms. Tong et al., WO3 thin film sensor prepared by sol-gel technique and its low-temperaturesensing properties to trimethylamine, MATER CH PH, 69(1-3), 2001, pp. 176-179
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
69
Issue
1-3
Year of publication
2001
Pages
176 - 179
Database
ISI
SICI code
0254-0584(20010301)69:1-3<176:WTFSPB>2.0.ZU;2-U
Abstract
Tungsten oxide (WO3) thin film has been prepared on a porcelain tube with g old comb-type electrodes by using a sol-gel technique with WCl6 as precurso r. The X-ray diffraction and X-ray photoelectron spectrum results indicate the crystallization of tungsten oxide occurs at temperatures higher than 50 0 degreesC. The sensing characteristics of the thin film sensor to trimethy lamine were measured. A low-temperature, high sensitivity, excellent select ivity, quick response and recover of thin film sensors to trimethylamine we re found. (C) 2001 Elsevier Science B.V. All rights reserved.