An investigation into the mechanisms limiting the safe operating area of aLIGBT in DI and DELDI technologies

Authors
Hardikar, S Xu, YZ Cao, GJ De Souza, MM Narayanan, EMS
Citation
S. Hardikar et al., An investigation into the mechanisms limiting the safe operating area of aLIGBT in DI and DELDI technologies, MICROELEC J, 32(2), 2001, pp. 121-126
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
32
Issue
2
Year of publication
2001
Pages
121 - 126
Database
ISI
SICI code
0026-2692(200102)32:2<121:AIITML>2.0.ZU;2-E
Abstract
The Forward Bias Safe Operating Areas (FBSOA) of 500 V LIGBTs in the Dielec tric Isolation (DI) and the Double Epitaxial Layer Dielectric Isolation (DE LDI) technologies are investigated by detailed numerical calculations. The FBSOA of a DELDI LIGBT is found to be wider than its DI counterpart. The fa ctors limiting the sustaining voltage in the on-state have been identified. A shallow floating P-layer incorporated under the gate extension results i n a significant improvement of the SOA in both the technologies. (C) 2001 E lsevier Science Ltd. All rights reserved.