A finite element simulator for three-dimensional analysis of interconnect structures

We have developed a set of simulation programs for two- and three-dimension al transient analysis of ULSI interconnects. The program package is called "Smart Analysis Programs" (SAP) and it supports capacitance and resistance extraction, quasi-electrostatic simulation (calculation of delay times and crosstalk), and coupled electro-thermal simulations. For the numerical solu tion of the involved partial differential equations (Euler equation, Poisso n equation, heat conduction equation), we apply the finite element method. Also available are a set of tools for construction of the input geometry, i mporting layout files, layout parameterization, automatic grid generation, postprocessing, and visualization of the simulated results. The simulators have been successfully used in various applications. Two representative exa mples are presented. In the first application, we calculate the resistance of a via in a copper dual damascene process and analyze the temperature and current density distributions. The second example is a matched polysilicon resistor pair. Here the delay time, crosstalk effects, and the mismatch in the resistances caused by self-heating due to high current is investigated . (C) 2001 Elsevier Science Ltd. All rights reserved.