RHEED and STM study of a homoepitaxial diamond (001) thin film produced bymicrowave plasma CVD

Authors
Takami, T Suzuki, K Mine, T Kusunoki, I Nishitani-Gamo, M Ando, T
Citation
T. Takami et al., RHEED and STM study of a homoepitaxial diamond (001) thin film produced bymicrowave plasma CVD, NEW DIAM FR, 10(6), 2000, pp. 329-337
Citations number
52
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
ISSN journal
13449931 → ACNP
Volume
10
Issue
6
Year of publication
2000
Pages
329 - 337
Database
ISI
SICI code
1344-9931(2000)10:6<329:RASSOA>2.0.ZU;2-0
Abstract
The surface of a homoepitaxial diamond (001) thin film produced by the micr owave plasma chemical vapor deposition (CVD) method was observed by reflect ion high-energy electron diffraction (RHEED) and scanning tunneling microsc opy (STM). The RHEED pattern indicates a 2x1/1x2 double-domain surface stru cture. By STM, two characteristic morphologies were observed: (1) a cluster model where the cluster grows along the [110] and [(1) over bar 10] direct ions and (2) a ridge model where the ridge grows along the 2x1 row on the d iamond (001) substrate.