Deep-level transient spectroscopy studies of silicon detectors after 24 GeV proton irradiation and 1 MeV neutron irradiation

Deep-Level Transient Spectroscopy (DLTS) has been used to investigate the d efects in high-resistivity silicon detectors after 1 x 10(11) proton cm(-2) irradiation at room temperature. The (E-e - 0.43 +/- 0.02) eV peak is seen in all materials after irradiation by neutrons or protons and has been inv estigated carefully. Annealing experiments show that it consists of four in dividual defects, one of which is the single negative divacancy. Two defect s (E-o - 0.35 +/- 0.02) eV and (E-e - 0.45 +/- 0.03) eV anneal out at 70 de greesC. A level (E-v + 0.20 +/- 0.02) eV was also observed to anneal out at about 60 degreesC in a p-type epitaxial diode after neutron irradiation. W e propose that these levels can be identified as to be v(3)(+) (E-v + 0.20 +/- 0.01) eV, V-3(-) (E-e - 0.45 +/- 0.03) eV and V-3(--) (E-c - 0.35 +/- 0 .02) eV charge states of the trivacancy, V-3. A defect at (E-c - 0.37 +/- 0 .02) eV annealed out at 170 degreesC and may be the four vacancy, V-4. (C) 2001 Elsevier Science B.V. All rights reserved.