Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

Analysis is performed for valence band structures and some characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers lattice-matched to InP substrate. The computed results show that band offsets are functions o f strain compensation instead of constants; strain compensation changes the band structures and the density of states, and hence affects the optical g ain and the threshold current density. Under the condition of zero net stra in, the values of the well width, cavity length and relative threshold carr ier density and threshold current density are determined for realization of 1.55 mum wavelength emission.