Computed growth rates of (001) GaN substrates in the hydride vapour phase method

A theoretical model developed to account for the (001) GaN growth by hydrid e vapour phase epitaxy in H-2 or neutral carrier gases is applied to invest igate the variation of the growth rate with the temperature and input parti al pressure of GaCl. The curves computed by taking into account the mass tr ansfer and GaN parasitical depositions illustrate the possibilities of the model in analysing and predicting the experimental results, other than the deposition obtained in N-2/H-2 mixtures without parasitical nucleation at v ery negative supersaturation values, which seems to indicate a third chlori ne desorption mechanism.