Evidence of polariton stimulation in semiconductor microcavities

Citation
F. Boeuf et al., Evidence of polariton stimulation in semiconductor microcavities, PHYS ST S-A, 183(1), 2001, pp. 29-33
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
183
Issue
1
Year of publication
2001
Pages
29 - 33
Database
ISI
SICI code
0031-8965(200101)183:1<29:EOPSIS>2.0.ZU;2-Q
Abstract
Stimulated photoluminescence of the lower polariton in CdTe microcavities i s studied at low temperature, using nonresonant excitation. The stimulation threshold is found to be independent of the number of quantum wells in the microcavities, which rules out the stimulation model based on population i nversion of either localized excitons or electron-hole plasma. On the other hand, the bosonic final state stimulation process, or boser effect, is cle arly evidenced by tuning the lower polariton to one LO phonon below the exc iton reservoir. For detunings closer to zero, the stimulation is dominated by another physical mechanism, that could be the exciton-exciton scattering into the upper and lower polariton states.