Dielectric microcavity in GaN/Si

Authors
Duboz, JY Dua, L Glastre, G Legagneux, P Massies, J Semond, F Grandjean, N
Citation
Jy. Duboz et al., Dielectric microcavity in GaN/Si, PHYS ST S-A, 183(1), 2001, pp. 35-39
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
183
Issue
1
Year of publication
2001
Pages
35 - 39
Database
ISI
SICI code
0031-8965(200101)183:1<35:DMIG>2.0.ZU;2-V
Abstract
We have demonstrated an original approach for fabricating microcavities in GaN grown on Si. Holes are etched in the Si substrate and highly reflective dielectric mirrors are deposited on both front and back sides. The cavity has been optically characterized and the results validate our approach.