Radiative and nonradiative recombination processes in GaN-based semiconductors

Time-resolved optical characterization is an indispensable tool to study th e recombination mechanisms of excitons and/or carriers based on radiative, non-radiative, localization and many-body processes. In this paper, we revi ew the instrumentation of various spectroscopic techniques for the assessme nt of InxGa1-xN-based semiconductors such as time-resolved photoluminescenc e (TRPL), time-resolved electroluminescence (TREL), transient grating (TG) method to probe photothermal processes, microscopic TRPL using optical micr oscope, submicroscopic TRPL using scanning near field optical microscopy (S NOM) and pump-and-probe spectroscopy for the measurement of transient absor ption/gain spectra. The obtained results are cited in the references.