Optical properties of cubic gallium nitride on SiC/Si pseudo-substrates

The cubic phase of III-nitrides has received much less attention than the h exagonal structure, because of difficulties inherent to the growth of this meta-stable phase. However, the possibility to avoid the effects of piezoel ectric fields in cubic phase GaN grown on non-polar substrates gives new in terest for this material. In this work, we present optical properties (phot oluminescence and photoreflectance) of cubic GaN layers grown by MBE on c-S iC/Si pseudo-substrates at room and low temperature. Photoluminescence prop erties of doped (n- and p-type) c-GaN layers and of AlGaN layers are also p resented.