Exciton/free-carrier plasma in GaN-based quantum wells: Scattering and screening

Authors
Portnoi, ME Galbraith, I
Citation
Me. Portnoi et I. Galbraith, Exciton/free-carrier plasma in GaN-based quantum wells: Scattering and screening, PHYS ST S-A, 183(1), 2001, pp. 87-90
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
183
Issue
1
Year of publication
2001
Pages
87 - 90
Database
ISI
SICI code
0031-8965(200101)183:1<87:EPIGQW>2.0.ZU;2-U
Abstract
The degree of ionisation of a two-dimensional electron-hole plasma is calcu lated in the low-density (Boltzmann) limit. The electron-hole interaction i s considered for all states: optically active and inactive, bound and unbou nd. The theory is applied to exciton/free-carrier plasma in GaN-based quant um wells at room temperature.