Exciton binding energies and oscillator strengths in GaAsN-GaAs quantum wells

Authors
Gil, B Bigenwald, P
Citation
B. Gil et P. Bigenwald, Exciton binding energies and oscillator strengths in GaAsN-GaAs quantum wells, PHYS ST S-A, 183(1), 2001, pp. 111-116
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
183
Issue
1
Year of publication
2001
Pages
111 - 116
Database
ISI
SICI code
0031-8965(200101)183:1<111:EBEAOS>2.0.ZU;2-J
Abstract
We propose the first tentative calculation of exciton binding energies and oscillator strengths in GaAs1-xNx-GaAs quantum wells with nitrogen contents below x = 0.05. Our model is based on the envelope function approximation and permits us to determine the excitonic properties of GaAs-GaAsN single q uantum wells with a variational and self-consistent process for marginal ty pe I or type II potentials due to the very small valence band offset for th is combination. We conclude that this is a type I system.