Photon recycling white light emitting diode based on InGaN multiple quantum well heterostructure

Authors
Nikolaev, VV Portnoi, ME Eliashevich, I
Citation
Vv. Nikolaev et al., Photon recycling white light emitting diode based on InGaN multiple quantum well heterostructure, PHYS ST S-A, 183(1), 2001, pp. 177-182
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
183
Issue
1
Year of publication
2001
Pages
177 - 182
Database
ISI
SICI code
0031-8965(200101)183:1<177:PRWLED>2.0.ZU;2-E
Abstract
A numerical method based on the transfer matrix technique is developed to c alculate the luminescence spectra of complex layered structures with photon recycling. Using this method we show a strong dependence of the emission s pectra on the optical eigenmode structure of the device. The enhancement of the photon recycling and the LED external efficiency can be achieved by pl acing the active regions inside single or coupled microcavities.