Atomic-scale simulation of 50 keV Si displacement cascades in beta-SiC - art. no. 054101

Molecular dynamics (MD) methods with a modified Tersoff potential have been used to simulate high-energy (50 keV) displacement cascades in beta -SiC. The results show that the cascade lifetime is very short, 10 times shorter than that in metals, and the surviving defects are dominated by C interstit ials and vacancies, which is similar to behavior for 10 keV cascades in SiC . Antisite defects are generated on both sublattices. Although the total nu mber of antisite defects remaining at the end of the cascade is smaller tha n that of Frenkel pairs, the number of Si antisites is larger than the numb er of Si interstitials. Most surviving defects are single interstitials and vacancies, and only 19% of the interstitial population is contained in clu sters. The size of the interstitial clusters is small, and the largest clus ter found, among all the cascades considered, contained only four interstit ial atoms, which is significantly different behavior than obtained by MD si mulations in metals. It is observed that all clusters are created by a quen ched-in mechanism directly from the collisional phase of the cascade to the ir final arrangements. The initial Si recoil traveled about 65 nm on averag e, generating multiple subcascades and forming a dispersed arrangement in t he cascade geometry. These results suggest that in-cascade or direct-impact amorphization in SiC does not occur with any high degree of probability du ring the cascade lifetime of Si cascades, even with high-energy recoils, co nsistent with previous experimental and MD observations.