Temperature dependence of the resistivity of a dilute two-dimensional electron system in high parallel magnetic field - art. no. 041101

We report measurements of the resistance of silicon metal-oxide-semiconduct or held-effect transistors as a function of temperature in high parallel ma gnetic fields where the two-dimensional system of electrons has been shown to be fully spin polarized. In a field of 10.8 T, insulating behavior is fo und for densities up to n(s) approximate to 1.35 x 10(11) cm(-2) approximat e to 1.5n(c); above this density the resistance is a very weak function of temperature, varying less than 10% between 0.25 and 1.90 K. At low densitie s rho --> infinity more rapidly as the temperature is reduced than in zero field and the magnetoresistance Delta rho/rho diverges as T --> 0.