Reaction path for Te during surfactant-mediated epitaxial growth of GaAs (100) - art. no. 041301

Authors
Consorte, CD Fong, CY Watson, MD Yang, LH Ciraci, S
Citation
Cd. Consorte et al., Reaction path for Te during surfactant-mediated epitaxial growth of GaAs (100) - art. no. 041301, PHYS REV B, 6304(4), 2001, pp. 1301
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6304
Issue
4
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010115)6304:4<1301:RPFTDS>2.0.ZU;2-V
Abstract
Using first-principles calculations and experimental evidence concerning th e essential environment for surfactant-mediated epitaxial growth on the GaA s/Te(100) surface, we determine a short-ranged reaction path for the As <-- --> Te exchange that is energetically favorable and prepares the surface fo r continued layer-by-layer growth. Furthermore, we explain the required par tial coverage of the surfactant atoms as well as the required presence of b oth As and Ga adatoms.