Temperature-dependent resistivity anomaly in doped AlAs/GaAs lateral superlattices: Evidence for Fermi-liquid behavior - art. no. 041304

Experimental measurements of the parallel (p(parallel to)) and perpendicula r (p(perpendicular to)) resistivity components of lateral superlattices as a function of temperature have shown an anomalous variation of the perpendi cular resistivity rho (perpendicular to). This is explained within the Ferm i-liquid theory as the transition between a low-T regime, in which rho (per pendicular to) is limited by umklapp processes and a high-T regime with enh anced screening due to multisubband occupancy.