Polariton propagation in high quality semiconductors: Microscopic theory and experiment versus additional boundary conditions - art. no. 045202

Citation
Hc. Schneider et al., Polariton propagation in high quality semiconductors: Microscopic theory and experiment versus additional boundary conditions - art. no. 045202, PHYS REV B, 6304(4), 2001, pp. 5202
Citations number
51
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6304
Issue
4
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010115)6304:4<5202:PPIHQS>2.0.ZU;2-4
Abstract
Linear exciton-polariton propagation in semiconductors is analyzed using a microscopic theory. Numerical results are compared with various approximati on schemes based on additional boundary conditions, and with phase-amplitud e linear spectroscopy experiments in high-quality GaAs. A simultaneous desc ription of the measured amplitude and phase of the transmitted electric fie ld is only possible with the full model.