In-phase step wandering on Si(111) vicinai surfaces: Effect of direct current heating tilted from the step-down direction - art. no. 045309

Citation
M. Degawa et al., In-phase step wandering on Si(111) vicinai surfaces: Effect of direct current heating tilted from the step-down direction - art. no. 045309, PHYS REV B, 6304(4), 2001, pp. 5309
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6304
Issue
4
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010115)6304:4<5309:ISWOSV>2.0.ZU;2-M
Abstract
In-phase step wandering (IPSW), a newly found step instability due to step- down de heating on Si(111) vicinal surfaces [Jpn. J. Appl. Phys. 38, L308 ( 1999)], is studied in detail in the case of de heating not parallel to the step-down direction, including the time evolution of IPSW. The nucleation a nd growth of IPSW regions and the reorientation of ridges of IPSW from the step-down direction to the current direction, resulting in the asymmetric w andering of individual steps, are observed. The effects of the current comp onent parallel to the step-down direction and perpendicular to it (parallel to the step direction) are discussed. As a special case an effect of de he ating parallel to the step direction is also studied.