Semiconductor quantum dots characterized by a strong dielectric mismatch wi
th their environment are studied theoretically through direct diagonalizati
on of the many-body Hamiltonian. The enhancement of the electron-electron C
oulumb interaction, arising from polarization effects, is found to induce a
strong increase in addition energies with increasing dielectric mismatch.
For large dielectric mismatch, the excited many-body states can undergo rec
onstructions as the dot is filled with carriers even in the absence of exte
rnal magnetic fields.