Deuterium diffusion in silicon-doped diamondlike carbon films - art. no. 045406

Diffusion of deuterium in diamondlike carbon films with different Si conten ts deposited by a pulsed are discharge method in deuterium atmosphere was s tudied. The concentration profiles of D were measured by secondary-ion-mass spectrometry and elastic recoil-detection techniques. A model is proposed to describe the experimental depth profiles. Diffusion, detrapping, and tra pping of D were taken into account in this model. Diffusion coefficients ob tained for nontrapped D resulted in activation energies of 1.5 +/- 0.2, 0.7 +/- 0.2, 0.6 +/- 0.2, and 1.2 +/- 0.2 eV for samples containing 0, 6, 15, and 33 at.% of Si, respectively.