Manufacturing tolerances of terrestrial concentrator p-on-n GaAs solar cells

Authors
Citation
C. Algora et V. Diaz, Manufacturing tolerances of terrestrial concentrator p-on-n GaAs solar cells, PROG PHOTOV, 9(1), 2001, pp. 27-39
Citations number
17
Categorie Soggetti
Environmental Engineering & Energy
Journal title
PROGRESS IN PHOTOVOLTAICS
ISSN journal
10627995 → ACNP
Volume
9
Issue
1
Year of publication
2001
Pages
27 - 39
Database
ISI
SICI code
1062-7995(200101/02)9:1<27:MTOTCP>2.0.ZU;2-Q
Abstract
The increasing interest in the manufacturing of terrestrial concentrator Ga As solar cells calls for the need to establish the guidelines, assessments and tolerances of the production process. Accordingly, this paper analyses, for the first time, the tolerances of this process. The influence of the e ntire solar cell (antireflecting coatings, semiconductor structure and seri es resistance) is considered. Move specifically, the parameters analysed av e: the thickness of the double antireflecting coating, window thickness, em itter thickness, base thickness, emitter doping level, base doping level, s hadowing factor and specific front contact resistance. The results are pres ented in the form of iso-efficiency plots as a function of the aforemention ed parameters. Therefore, besides the conclusions extracted in this paper, numerous others may be formed according to particular necessities. Copyrigh t (C) 2001 John Wiley & Sons, Ltd.