Scanning electron microscopy of nonconductive specimens at critical energies in a cathode lens system

A method for scanning electron microscopy imaging of nonconductive specimen s, based on measurement and utilisation of a critical energy, is described in detail together with examples of its application. The critical energy, a t which the total electron yield curve crosses the unit level, is estimated on the basis of measurement of the image signal development from the begin ning of irradiation. This approach, concentrated onto the detected signal a s the only quantity crucial for the given purpose of acquiring a noncharged micrograph, evades consequences of any changes in an irradiated specimen t hat influence the total electron yield curve and possibly also the critical energy value. Implementation of the automated method, realised using a cat hode lens-equipped scanning electron microsope (SEM), enables one to establ ish a mean rate of charging over the field of view and its dependence on th e electron landing energy. This dependence enables one to determine the ene rgy of a minimum damage of the image of the given field of view. Factors in fluencing reliability and applicability of the method are discussed and exa mples of noncharged micrographs of specimens from both lift: and material s cience fields are presented.