The 6.5 kV clustered insulated gate bipolar transistor in homogeneous basetechnology

The aim of this paper is to evaluate the performance of a new power semicon ductor device called the clustered insulated gate bipolar transistor (CIGBT ) in the homogeneous base (HB) technology for high power applications. The CIGBT belongs to a new family of MOS controlled power devices with thyristo r mode of operation in the on-state and current saturation characteristics even at high gate biases. The saturation characteristics are achieved throu gh a unique 'self-clamping phenomenon at a predetermined anode voltage. Thi s inherent feature enables a wide FBSOA and low loss during switching. Our detailed analysis of the CIGBT using a 2-D mixed device-circuit simulation tool indicates that 525 mum of lightly doped silicon is adequate to block 6 .5 kV in the HB technology. The thin substrate improves the trade-off betwe en conduction and switching losses even further. With an on-state voltage d rop as low as 2 V at 30 A cm(-2) and 3.1 V at 100 A cm(-2) the device is ab le to turn off under inductive switching conditions at a 3 kV line voltage, with significantly low energy losses in comparison to an optimised homogen eous base insulated gate bipolar transistor (HB-IGBT). Further. the device shows good short circuit withstand capability and its positive temperature coefficient of the forward voltage drop eases parallel integration. (C) 200 1 Elsevier Science Ltd. All rights reserved.