Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring

Citation
J. He et al., Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring, SOL ST ELEC, 45(1), 2001, pp. 79-85
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
1
Year of publication
2001
Pages
79 - 85
Database
ISI
SICI code
0038-1101(200101)45:1<79:AMOTEO>2.0.ZU;2-2
Abstract
An analytical model of the three-dimensional (3-D) effect due to the latera l radius of the main junction and width of the ring junction on voltage and edge peak field profiles for the planar junction with a single floating el ectrical field limiting ring structure have been proposed for the first tim e. From this model analysis, the influence on the voltage and edge peak fie ld of the reverse voltage, 3-D factors such as lateral curvature of the mai n junction and width of the ring junction, space distance between the main junction and ring junction and junction depth are analyzed, and then the ex pressions for predicting the optimal space and maximum breakdown voltage ar t: also obtained. The analytical results are in agreement with the previous numerical analysis. (C) 2001 Elsevier Science Ltd. All rights reserved.