Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates

Surface photovoltage (SPV) measurements may provide an effective method for determining; electrical properties of silicon on insulator (SOI) surfaces, In the experimental parr of this work the use of the non-contact SPV-based method of surface charge profiling (SCP) in the monitoring of surface char ges is explored, it was demonstrated that application of this method is con strained by the interactions between charges on the Si surface and at the i nterface between the Si active layer and buried oxide (box), These interact ions are subsequently modeled and related to the SCP measurements. It is de monstrated that at a given doping level, the thickness of the active layer and density of charge associated with the box are factors predetermining th e effectiveness of this method in SOI surface characterization. Through mod eling, the SOI substrate parameter space for which the SCP method can yield useful information is defined. (C) 2001 Elsevier Science Ltd. All rights r eserved.