Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature

This investigation reports the effect of rapid-thermal-annealing (RTA) on m etallic barrier TiN against the interdiffusions of Ti and Si into barium st rontium titanate (BST) in Pt/BST/Pt/TiN/Ti/Si capacitors. In the integratio n of BST capacitors, the thermal budget of the BST deposition would cause t he inter-diffusions of Ti and Si from Ti adhesion layer and Si plug respect ively. This event would degrade the BST capacitors. To address this issue. rapid-thermal-annealed TiN barriers were deposited between the bottom elect rode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found ill this: experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti /Si capacitors. including high dielectric constant (epsilon (r) = 320). low leakage current (1.5 x 10(-8) A/cm(2)) under 0.1 MV/cm, and greater than 1 0 year lifetime under 1.6 MV/cm were obtained with Ar + O-2 mixed ambient a t a low substrate temperature (300 degreesC). (C) 2001 Elsevier Science Ltd . All rights reserved.