Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices

Authors
Ngw, CK Sweet, M Bose, JVSC Spulber, O King, NL Vershinin, K De Souza, MM Narayanan, EMS
Citation
Ck. Ngw et al., Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices, SOL ST ELEC, 45(1), 2001, pp. 127-132
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
1
Year of publication
2001
Pages
127 - 132
Database
ISI
SICI code
0038-1101(200101)45:1<127:MIOLVD>2.0.ZU;2-J
Abstract
The aim of this paper is to demonstrate. for the first time. the viability of the monolithic integration of low voltage components, such as n and p ch annel MOSFETs. onto a planar vertical MOS controlled power device. This app roach paves the way for realising a monolithic intelligent power chip with enhanced performance and reliability with respect to on-chip temperature. o ver-current and over-voltage protection circuitry. The detailed simulation results indicate no parasitic effects, both on the low voltage and power de vices. (C) 2001 Elsevier Science Ltd. All rights reserved.