Extraction of Schottky diode parameters with a bias dependent barrier height

We describe a technique to extract device parameters of a Schottky barrier diode whose barrier height is bias dependent and which contains a linear se ries resistance. The extracted parameters include: the saturation current ( zero bias barrier height), the voltage dependence of the barrier height and of the ideality factor as well as series resistance. The technique makes u se of forward biased current voltage (I-V) characteristic acid voltage-depe ndent differential slope curve alpha = d(In l)/d(ln V). The method is verif ied using simulated and experimental I-V curves of an Al-pSi structure. The proposed procedure is not limited to Schottky barrier diodes but may be ap plied to other diode types based on PN junction. (C) 2001 Elsevier Science Ltd. All rights reserved.