A dynamic n-buffer insulated gate bipolar transistor

Authors
Huang, S Sheng, K Udrea, F Amaratunga, GAJ
Citation
S. Huang et al., A dynamic n-buffer insulated gate bipolar transistor, SOL ST ELEC, 45(1), 2001, pp. 173-182
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
1
Year of publication
2001
Pages
173 - 182
Database
ISI
SICI code
0038-1101(200101)45:1<173:ADNIGB>2.0.ZU;2-T
Abstract
A novel dynamic n-buffer insulated gate bipolar transistor (DB-IGBT) with d ouble gates is proposed and analysed in detail by using two-dimensional num erical simulations. It is found that the turn-off energy loss of this devic e is reduced and the short-circuit performance is improved significantly co mpared to the optimised conventional IGBT. Similar to the NPT-IGBT, the swi tching performance of the DB-IGBT is insensitive to temperature. These adva ntages make this device an attractive candidate for high frequency high pow er application. (C) 2001 Published by Elsevier Science Ltd. All rights rese rved.