A novel multi-level interconnect scheme with air as low K inter-metal dielectric for ultradeep submicron application

In this letter, a novel multi-level interconnect scheme with air as the low K inter-metal dielectric for ultra large scale integrated circuit (ULSI) a pplication in ultradeep submicron (UDSM) range is proposed. The detailed pr ocess integration with copper dual damascene processing is described. The f easibility of the scheme is examined by trimethylaluminum Raphael simulatio n For the effective dielectric constant and the cutoff frequency in a stand ard divide by three counter. The simulation results are also compared with these reported air gap formation technologies. The results show the develop ed multi-level interconnect system is suitable for UDSM application. (C) 20 01 Elsevier Science Ltd. All rights reserved.