The electronic and optical properties of Si/SiO2 superlattices: role of confined and defect states

The Si layer thickness dependence of the optical properties of silicon/sili con dioxide (Si/SiO2) superlattices has been, for the first time, theoretic ally investigated. In our first principle calculation we consider both full y passivated interfaces and the presence of oxygen vacancy at the interface . Our results show the key role played both by the quantum confined states and interface states in the experimentally observed visible luminescence in Si/SiO2 confined systems. (C) 2000 Elsevier Science B.V. All rights reserv ed.